LONDON — Toshiba Corp. has developed technology for a nanowire transistor, a major candidate for system LSI in the 16-nm generation and beyond. The company said it has achieved 1-mA per micron ...
The EPC2016 is Efficient Power Conversion's newest enhancement mode gallium nitride power transistor. The EPC2016 is a 3.36 mm 2, 100 VDS, 11 A device with a maximum RDS(on) of 16 milliohms with 5 V ...
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