The new TPH2R70AR5 is rated for a maximum drain current (ID) of 190A at an ambient temperature of 25C. The device can operate with a channel temperature (Tch) up to 175C, thereby lowering the ...
Toshiba Electronics Europe has launched the TPH2R70AR5, a new 100V-rated N-channel power MOSFET fabricated with its latest-generation process.
The R6007KNJ is a power MOSFET that is designed to be of low ON-resistance and ultra fast switching speed. Furthermore, the device has a drain-source voltage of 600 V, drain-source maximum resistance ...
The RJF0604JPD Thermal FET switch has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And ...
Allegro MicroSystems, Inc. announces a new full-bridge MOSFET controller for use with external N-channel power MOSFETs. Allegro MicroSystems, Inc. announces a new full-bridge MOSFET controller for use ...
Operating with frequencies from UHF to 2.5 GHz, the NE552R479A n-channel, LDMOS FET does not require a negative power supply voltage and supports battery voltages from 3V to 8V. Suitable applications ...
Toshiba Launches 100V N-Channel Power MOSFET with Its Latest Generation Process Technology[1] to Improve Efficiency in Switched-Mode Power Supplies for Industrial Equipment Toshiba Electronic Devices ...