Unpacking the challenges with high-voltage power conversion and how SiC fits in. The pivotal advantages of SiC over traditional silicon in next-gen power converters. Rethinking circuit design for ...
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Quantum-tunneling field-effect transistor overcomes barriers to integrated-circuit chip development
The next generation of microelectronics relies on radical improvements in transistor switching performance to advance ...
Scientists from RWTH Aachen University, AMO GmbH, AIXTRON SE, and EPFL have demonstrated power detectors based on Molybdenum disulphide (MoS 2) that operate at zero bias.
For the PDF version of this article, click here. Protecting power transistors against overcurrent failure has always been a challenging issue in power circuit design. In order to protect against even ...
Finnish company Semiqon has developed a transistor that operates with virtually zero heat dissipation. They have made silicon-based quantum processors to make future quantum computers more affordable, ...
A dual contact architecture with ultra-low-resistance contacts increases drive current and enables higher frequencies at matched capacitance.
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Kyoto University researchers have demonstrated a silicon carbide transistor capable of operating at temperatures up to 600°C, ...
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