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Gallium Nitride (GaN) Characterization with Raman and Photoluminescence Techniques

Gallium nitride (GaN) is a binary III/V semiconductor seen as a potential successor to silicon. GaN has a wider bandgap than silicon, meaning it can maintain higher voltages in electronic devices. 1 ...
Semiconductor Engineering

Noise Parameter Survey Of Millimeter Wave GaN HEMT Technologies

A technical paper titled “A Survey of GaN HEMT Technologies for Millimeter-Wave Low Noise Applications” was published by researchers at Wright-Patterson AFB, Teledyne Scientific, HRL Laboratories, BAE ...
EDN

GaN fundamentals: Hybrid structures, HEMT, and substrate choices

Part 1 of this article series on gallium nitride (GaN) fundamentals described crystal structures and the formation of the two-dimensional electron gas (2DEG), along with material figures of merit and ...
EDN

GaN fundamentals: 2DEG, crystal structure, and figure of merit

Gallium nitride (GaN) power devices are redefining the limits of switching converters by combining wide bandgap physics with lateral HEMT structures optimized for fast, low-loss operation. This ...
Electronic Design

GaN HEMTs Bring Low-Noise Power to Switching Apps

What are GaN HEMTs and why are they important? How GaN devices can handle kilowatt power conversion. Gallium-nitride (GaN) high electron mobility transistors (HEMTs) are a form of field-effect ...
Electronic Design

GaN Overvoltage Effects: Degradation and Recovery

What's needed to fill in the gaps in understanding GaN HEMTs and their catastrophic failures. Degradation mechanisms that plague GaN HEMTs. Why overvoltage ruggedness and surge-energy withstand go ...