Amorphous oxide semiconductors like IGZO (indium gallium zinc oxide) offer acceptable carrier mobility with very low leakage. Amorphous oxides are especially attractive for stacked devices because ...

The relentless advancement of artificial intelligence (AI) across sectors such as healthcare, the automotive industry, and social media necessitates the development of more efficient hardware ...

TL;DR: Rising DRAM prices are driving a 10-25% increase in smartphone bill of materials for 2026, impacting low-end models most severely. Chinese OEMs face the greatest challenges, while Apple and ...

Rapidly rising DRAM prices have the potential to seriously hurt PC gaming. You've probably already seen the crazy price hikes for DDR5 memory, with many popular kits doubling in price over just a few ...

The New York Stem Cell Foundation, a $23-million-a-year biomedical nonprofit, was acquired by the Jackson Laboratory as part of a move to expand automation in life sciences research. The acquisition, ...

LENOX — Now that an oasis in the town’s wireless desert has turned out to be a mirage, is a 150-foot tower atop the new public safety center in play? The answer is maybe, though not right away, said ...

The Atlas® G6 system delivers smaller spot size, higher signal sensitivity and enhanced precision for next generation gate-all-around and high bandwidth memory device production WILMINGTON, ...

The Atlas ® G6 system delivers smaller spot size, higher signal sensitivity and enhanced precision for next generation gate-all-around and high bandwidth memory device production The Atlas G6 system ...

SK Hynix has unveiled a long-term roadmap for next-generation DRAM technologies, laying out a vision that aims to drive sustainable innovation over the next 30 years as the global semiconductor ...

NEO's IGZO-based 3D X-DRAM delivers up to 512Gb density and 450-second retention with ultra-low power consumption — built on 3D NAND-compatible processes and optimized for AI, in-memory computing, and ...

Abstract: Dynamic charge loss of next generation DRAM with a cell array transistor consisting of a bulk-less thin body was studied. The relationship between dynamic charge loss and floating body ...