Amorphous oxide semiconductors like IGZO (indium gallium zinc oxide) offer acceptable carrier mobility with very low leakage. Amorphous oxides are especially attractive for stacked devices because ...
Abstract: Device nonuniformity of ultra-scaled novel vertical a-IGZO-FETs is induced by multi-sources, such as dimension variation and material disorder, limiting large-scale DRAM design. Particularly ...
Abstract: For the first time, we present a one-transistor dynamic random access memory (DRAM) cell using the ferroelectric polarization-assisted charge trapping phenomenon. The gate structure is ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback